Aluminium nitride

Aluminium nitride
Aluminium Nitride powder
Names
IUPAC name
Aluminium nitride
Other names
AlN
Identifiers
3D model (JSmol)
ChEBI
ChemSpider
ECHA InfoCard 100.041.931
EC Number
  • 246-140-8
Gmelin Reference 13611
RTECS number
  • BD1055000
UNII
CompTox Dashboard (EPA)
SMILES
  • [AlH2-]1[N+]47[AlH-]2[N+][AlH-]3[N+]8([AlH2-][NH+]([AlH2-]4)[AlH2-]6)[AlH-]4[N+][AlH-]5[N+]6([AlH2-]6)[Al-]78[N+]78[AlH-]([NH+]69)[NH+]5[AlH2-][NH+]4[AlH-]7[NH+]3[AlH2-][NH+]2[AlH-]8[NH+]1[AlH2-]9
  • [AlH2-]1[NH+]([AlH2-]6)[AlH2-][NH+]7[AlH-]2[N+][Al-]3([N+][AlH-]9[N+]5)[N+]18[Al-]45[N+][AlH-]5[NH+]6[Al-]78[N+]78[AlH2-][NH+]5[AlH2-][N+]4([AlH2-][NH+]9[AlH2-]4)[AlH-]7[N+]34[AlH2-][NH+]2[AlH2-]8
Properties
AlN
Molar mass 40.989 g/mol[1]
Appearance white to pale-yellow solid
Density 3.255 g/cm3[1]
Melting point 2,500 °C (4,530 °F; 2,770 K)[2]
hydrolyses (powder), insoluble (monocrystalline)
Solubility insoluble, subject of hydrolysis in water solutions of bases and acids [3]
Band gap 6.015 eV[4][5] (300 K, direct)
Electron mobility ~300 cm2/(V·s)
Thermal conductivity 321 W/(m·K)[6]
2.048[7](300 k, λ = 633 nm)
Structure[8]
Wurtzite (Atmospheric)
Space group
C6v4-P63mc, No. 186, hP4
Lattice constant
a = 0.31117 nm [9] , c = 0.49788 nm



Formula units (Z)
2
Tetrahedral
Structure[10]
Rocksalt (High-pressure)
Space group
, No. 225, cF8
Lattice constant
a = 0.3938 nm



Formula units (Z)
4
Thermochemistry
Std enthalpy of
formation ΔfHo298
−318.0 kJ/mol
Standard molar
entropy So298
20.2 J/(mol·K)
Specific heat capacity, C 30.1 J/(mol·K)
Hazards
GHS labelling:
Pictograms
GHS07: Exclamation mark‍GHS08: Health hazard‍GHS09: Environmental hazard
Signal word
Warning
Hazard statements
H315, H319, H335, H373, H411
Precautionary statements
P260, P264, P271, P280, P301+P330+P331, P302+P352, P303+P361+P353, P304+P340, P305+P351+P338, P310, P312, P321, P332+P313, P337+P313, P362, P363, P403+P233, P405, P501
NFPA 704 (fire diamond)
NFPA 704 four-colored diamondHealth 1: Exposure would cause irritation but only minor residual injury. E.g. turpentineFlammability 0: Will not burn. E.g. waterInstability 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g. liquid nitrogenSpecial hazards (white): no code
1
0
0
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
checkY verify (what is checkY☒N ?)
Infobox references

Aluminium nitride is a chemical compound made of aluminium and nitride ions. The chemical formula is AlN. It is a semiconductor with a wide bandgap of 6 eV, similar to boron nitride. It has a weak piezoelectric effect that can be made stronger by adding small amounts of metals like scandium.[11]

It is used in thermal management and electronic applications if there is high thermal conductivity and electronic insulation required. It is can sometimes be an alternative to beryllium oxide because it is not a health hazard when it is machined, unlike beryllium oxide.[12]

References

  1. 1 2 Haynes, p. 4.45.
  2. ↑ Haynes, p. 12.80.
  3. ↑ Fukumoto, S.; Hookabe, T.; Tsubakino, H. (2010). "Hydrolysis behavior of aluminum nitride in various solutions". J. Mat. Science. 35 (11): 2743–2748. doi:10.1023/A:1004718329003. S2CID 91552821.
  4. ↑ Haynes, p. 12.85.
  5. ↑ Feneberg, M.; Leute, R. A. R.; Neuschl, B.; Thonke, K.; Bickermann, M. (2010). Phys. Rev. B. 82 (7) 075208. Bibcode:2010PhRvB..82g5208F. doi:10.1103/physrevb.82.075208.{{cite journal}}: CS1 maint: untitled periodical (link)
  6. ↑ Cheng, Zhe; Koh, Yee Rui; Mamun, Abdullah; Shi, Jingjing; Bai, Tingyu; Huynh, Kenny; Yates, Luke; Liu, Zeyu; Li, Ruiyang; Lee, Eungkyu; Liao, Michael E.; Wang, Yekan; Yu, Hsuan Ming; Kushimoto, Maki; Luo, Tengfei; Goorsky, Mark S.; Hopkins, Patrick E.; Amano, Hiroshi; Khan, Asif; Graham, Samuel (2020). "Experimental observation of high intrinsic thermal conductivity of AlN". Physical Review Materials. 4 (4) 044602. arXiv:1911.01595. Bibcode:2020PhRvM...4d4602C. doi:10.1103/PhysRevMaterials.4.044602. S2CID 207780348. Retrieved 2020-04-03.
  7. ↑ Beliaev, Leonid Yu.; Shkondin, Evgeniy; Lavrinenko, Andrei V.; Takayama, Osamu (2021). "Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths". Journal of Vacuum Science & Technology A. 39 (4) 043408. Bibcode:2021JVSTA..39d3408B. doi:10.1116/6.0000884.
  8. ↑ Vandamme, Nobuko S.; Richard, Sarah M.; Winzer, Stephen R. (1989). "Liquid-Phase Sintering of Aluminum Nitride by Europium Oxide Additives". Journal of the American Ceramic Society. 72 (8): 1409–1414. doi:10.1111/j.1151-2916.1989.tb07662.x.
  9. ↑ Vurgaftman, I.; Meyer, J. R. (2003). "Band parameters for nitrogen-containing semiconductors". Journal of Applied Physics. 94 (6): 3675–3696. Bibcode:2003JAP....94.3675V. doi:10.1063/1.1600519.
  10. ↑ Christensen, N. E.; Gorczyca, I. (1993). "Calculated structural phase transitions of aluminum nitride under pressure". Physical Review B. 47 (8): 4307–4314. Bibcode:1993PhRvB..47.4307C. doi:10.1103/PhysRevB.47.4307. PMID 10006577.
  11. ↑ Haider, Syed T.; Shah, Muhammad A.; Lee, Duck-Gyu; Hur, Shin (2023). "A Review of the Recent Applications of Aluminum Nitride-Based Piezoelectric Devices". IEEE Access. 11: 58779–58795. Bibcode:2023IEEEA..1158779H. doi:10.1109/ACCESS.2023.3276716.
  12. ↑ "Aluminum Nitride – AlN". Precision Ceramics. Retrieved 2026-04-05.